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EPAD
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D EVICES, I NC.
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ALD114813/ALD114913
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD?
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= -1.30V
GENERAL DESCRIPTION
ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETS matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
These MOSFETS are designed for exceptional device electrical characteristics
matching. As these devices are on the same monolithic chip, they also exhibit
excellent temperature tracking characteristics. They are versatile as design com-
ponents for a broad range of analog applications, and they are basic building
blocks for current sources, differential amplifier input stages, transmission gates,
and multiplexer applications. Besides matched pair electrical characteristics, each
individual MOSFET also exhibits well controlled parameters, enabling the user to
depend on tight design limits. Even units from different batches and different date
of manufacture have correspondingly well matched characteristics.
APPLICATIONS
? Functional replacement of Form B (NC) relays
? Ultra low power (nanowatt) analog and digital
circuits
? Ultra low operating voltage (<0.2V) analog and
digital circuits
? Sub-threshold biased and operated circuits
? Zero power fail safe circuits in alarm systems
? Backup battery circuits
? Power failure and fail safe detector
? Source followers and high impedance buffers
? Precision current mirrors and current sources
? Capacitives probes and sensor interfaces
? Charge detectors and charge integrators
? Differential amplifier input stage
? High side switches
? Peak detectors and level shifters
? Sample and Hold
? Current multipliers
? Discrete analog switches and multiplexers
? Discrete voltage comparators
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying appli-
cations in single 1.5V to +/-5V systems where low input bias current, low input
capacitance and fast switching speed are desired. These devices exhibit well
controlled turn-off and sub-threshold charactersitics and therefore can be used in
designs that depend on sub-threshold characteristics.
PIN CONFIGURATIONS
ALD114813
The ALD114813/ALD114913 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
IC*
1
V -
V -
16
IC*
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user, for
most applications, connect the V+ pin to the most positive voltage and the V- and
IC pins to the most negative voltage in the system. All other pins must have
voltages within these voltage limits at all times.
FEATURES
G N1
D N1
S 12
V -
D N4
2
3
4
5
6
V -
M1
M4
M2
M3
V +
15
14
13
12
11
G N2
D N2
V +
S 34
D N3
? Depletion mode (normally ON)
? Precision Gate Threshold Voltages: -1.30V +/- 0.04V
G N4
7
10
G N3
? Nominal R DS(ON) @V GS =0.0V of 1.3K ?
? Matched MOSFET to MOSFET characteristics
IC*
8
V -
V -
9
IC*
? Tight lot to lot parametric control
? Low input capacitance
? V GS(th) match (V OS ) — 20mV
? High input impedance — 10 12 ? typical
SCL, PCL PACKAGES
ALD114913
? Positive, zero, and negative V GS(th) temperature coefficient
? DC current gain >10 8
? Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0 ° C to +70 ° C 0 ° C to +70 ° C
IC*
G N1
D N1
S 12
1
2
3
4
V-
M1
M2
V-
V-
8
7
6
5
IC*
G N2
D N2
V-
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
SAL, PAL PACKAGES
*IC pins are internally connected,
connect to V-
ALD114813SCL ALD114813PCL ALD114913SAL ALD114913PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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ALD114935PA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
ALD114935PAL 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD114935SA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
ALD114935SAL 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD118 功能描述:通用继电器 1 Form A 3A 277VAC 3A 30VDC 18V RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
ALD118T 制造商:Panasonic Electric Works 功能描述:
ALD118W 功能描述:通用继电器 1 Form A 3A 277VAC 3A 30VDC 18V RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料: